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IRFU2607ZPbF

International Rectifier
Part Number IRFU2607ZPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Jan 30, 2016
Detailed Description PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operatin...
Datasheet PDF File IRFU2607ZPbF PDF File

IRFU2607ZPbF
IRFU2607ZPbF

Overview
PD - 95953A IRFR2607ZPbF IRFU2607ZPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free G HEXFET® Power MOSFET D VDSS = 75V RDS(on) = 22mΩ Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
S ID = 42A D-Pak I-Pak IRFR2607ZPbF IRFU2607ZPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissip...


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