N-Channel 30-V (D-S) MOSFET
ME4410B/ME4410B-G
GENERAL DESCRIPTION
The ME4410B is the N-Channel logic enhancement mode power field effect
transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8) Top View
FEATURES
● RDS(ON) ≦ 18 mΩ@VGS=10V ● RDS(ON) ≦ 30 mΩ@VGS=4.
5V ● Super high density cell desig...