Part Number
|
IGC109T120T6RL |
Manufacturer
|
Infineon |
Description
|
IGBT |
Published
|
Feb 7, 2016 |
Detailed Description
|
IGC109T120T6RL
IGBT4 Low Power Chip
Features: • 1200V Trench + Field stop technology • low switching losses • positive...
|
Datasheet
|
IGC109T120T6RL
|
Overview
IGC109T120T6RL
IGBT4 Low Power Chip
Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type
VCE ICn
Die Size
IGC109T120T6RL 1200V 110A 7.
48 x 14.
61 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
7.
48 x 14.
61
4 x (2.
761 x 6.
458) 0.
811 x 1.
31
mm 2
...
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