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IGC109T120T6RM

Infineon
Part Number IGC109T120T6RM
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft ...
Datasheet PDF File IGC109T120T6RM PDF File

IGC109T120T6RM
IGC109T120T6RM

Overview
IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling This chip is used for: • medium power modules Applications: • medium power drives C G E Chip Type VCE ICn Die Size IGC109T120T6RM 1200V 110A 7.
48 x 14.
61 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.
48 x 14.
61 4 x (2.
761 x 6.
458) 0.
811 x 1.
31 mm 2 109.
3 / 82.
6 120 µm 150 mm 90 grd 126 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23...


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