CEP6106/CEB6106
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
57
±20
56 170 131 0.
88
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store ...