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CEP6106

CET
Part Number CEP6106
Manufacturer CET
Description N-Channel MOSFET
Published Feb 9, 2016
Detailed Description CEP6106/CEB6106 N-Channel Enhancement Mode Field Effect Transistor FEATURES 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V. Super ...
Datasheet PDF File CEP6106 PDF File

CEP6106
CEP6106

Overview
CEP6106/CEB6106 N-Channel Enhancement Mode Field Effect Transistor FEATURES 57V, 56A ,RDS(ON) = 19mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 57 ±20 56 170 131 0.
88 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range EAS IAS TJ,Tstg 117 51 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1.
14 62.
5 Units C/W C/W Details are subject to change without notice .
1 Rev...


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