Part Number
|
MTBA0N10KJ3 |
Manufacturer
|
Cystech Electonics |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Feb 9, 2016 |
Detailed Description
|
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTBA0N10KJ3
Spec. No. : C139J3 Issued Date : 2015.09....
|
Datasheet
|
MTBA0N10KJ3
|
Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTBA0N10KJ3
Spec.
No.
: C139J3 Issued Date : 2015.
09.
30 Revised Date : Page No.
: 1/ 9
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.
8A
RDS(ON)@VGS=4.
5V, ID=8.
8A
RDS(ON)@VGS=4V, ID=8.
8A
100V 13.
4A
3.
7A 82 mΩ(typ) 89 mΩ(typ) 92 mΩ(typ)
Symbol
MTBA0N10KJ3
Outline
TO-252(DPAK)
G:Gate D:Drain S:Source
G DS
Ordering Information
Device MTBA0N10KJ3-0-T3-G
Package
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2...
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