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MTBA0N10KJ3

Cystech Electonics
Part Number MTBA0N10KJ3
Manufacturer Cystech Electonics
Description N-Channel Enhancement Mode MOSFET
Published Feb 9, 2016
Detailed Description CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTBA0N10KJ3 Spec. No. : C139J3 Issued Date : 2015.09....
Datasheet PDF File MTBA0N10KJ3 PDF File

MTBA0N10KJ3
MTBA0N10KJ3

Overview
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET MTBA0N10KJ3 Spec.
No.
: C139J3 Issued Date : 2015.
09.
30 Revised Date : Page No.
: 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • ESD Protected Gate • Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=8.
8A RDS(ON)@VGS=4.
5V, ID=8.
8A RDS(ON)@VGS=4V, ID=8.
8A 100V 13.
4A 3.
7A 82 mΩ(typ) 89 mΩ(typ) 92 mΩ(typ) Symbol MTBA0N10KJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTBA0N10KJ3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2...


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