Linear Low Noise SiGe:C Bipolar RF
Transistor
• High gain ultra low noise RF
transistor • Based on Infineon's reliable high volume Silicon
Germanium technology
• Provides outstanding performance for a wide range of wireless applications up to 10 GHz
• Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain
Gms = 21 dB at 1.
8 GHz, Gma = 11.
5 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free very thin
small leadless package (package height 0.
32 mm max.
ideal for modules) • Qualification report according to AEC-Q101 available
BFR750L3RH
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type ...