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BFR750L3RH

Infineon
Part Number BFR750L3RH
Manufacturer Infineon
Description Linear Low Noise SiGe:C Bipolar RF Transistor
Published Feb 11, 2016
Detailed Description Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable h...
Datasheet PDF File BFR750L3RH PDF File

BFR750L3RH
BFR750L3RH

Overview
Linear Low Noise SiGe:C Bipolar RF Transistor • High gain ultra low noise RF transistor • Based on Infineon's reliable high volume Silicon Germanium technology • Provides outstanding performance for a wide range of wireless applications up to 10 GHz • Ideal for WLAN and all 5-6 GHz applications • High OIP3 and P-1dB for driver stages • High maximum stable and available gain Gms = 21 dB at 1.
8 GHz, Gma = 11.
5 dB at 6 GHz • Pb-free (RoHS compliant) and halogen-free very thin small leadless package (package height 0.
32 mm max.
ideal for modules) • Qualification report according to AEC-Q101 available BFR750L3RH ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR750L3RH Marking Pin Configuration R8 1=B 2=C 3=E Package TSLP-3-9 1 2013-09-09 BFR750L3RH Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage TA = 25 °C TA = -55 °C Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 96°C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS Value 4 3.
5 13 13 1.
2 90 9 360 150 -55 .
.
.
150 Value 150 Unit V mA mW °C Unit K/W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 3 mA, IB = 0 Collector-emitter cutoff current VCE = 13 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.
5 V, IC = 0 DC current gain IC = 60 mA, VCE = 3 V, pulse measured V(BR)CEO 4 4.
7 - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 160 250 400 - 1TS is measured on the emitter lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-09 BFR750L3RH Electri...


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