IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-
Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 252) ID
100 V 8.
2 mW 80 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Package Marking
PG-TO220-3 086N10N
PG-TO262-3 086N10N
PG-TO263-3 083N10N
PG-TO252-3 082N10N
Maximum ratings, at T j=25 °C, u...