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IPI086N10N3

INCHANGE
Part Number IPI086N10N3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 29, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI086N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(o...
Datasheet PDF File IPI086N10N3 PDF File

IPI086N10N3
IPI086N10N3

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI086N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.
2mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 320 A PD Total Dissipation @TC=25℃ 125 W Tj Max.
Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.
2 UNIT ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPI086N10N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specifie...


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