SIGC57T120R3LE IGBT3 Power Chip Features:  1200V Trench & Field Stop technology  low turn-off losses  short tail current  positive temperature coefficient  easy paralleling This chip is used for:  power modules Applications:  drives Chip Type VCE IC SIGC57T120R3LE 1200V 50A Die Size 7.
6 x 7.
53 mm2 C G E Package sawn on foil Mechanical Parameters Raster size Emitter pad size (incl.
gate pad) Gate pad size Area total Thickness Wafer size Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 7.
6 x 7.
53 4x(2.
98 x 2.
97) 1.
319 x 0.
820 mm2 57.
2 120 µm 200 mm 458 Photoimide 3200 nm ...

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