FDB86563_F085 N-Channel PowerTrench® MOSFET FDB86563_F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.
8 mΩ December 2014 Features „ Typical RDS(on) = 1.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems DD GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild web‐ site  at  https://www.
fairchildsemi.
com/package‐drawings/TO/ TO263A02.
pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
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