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FDB86563_F085

Fairchild Semiconductor
Part Number FDB86563_F085
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Feb 15, 2016
Detailed Description FDB86563_F085 N-Channel PowerTrench® MOSFET FDB86563_F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.8 mΩ December 2...
Datasheet PDF File FDB86563_F085 PDF File

FDB86563_F085
FDB86563_F085

Overview
FDB86563_F085 N-Channel PowerTrench® MOSFET FDB86563_F085 N-Channel PowerTrench® MOSFET 60 V, 110 A, 1.
8 mΩ December 2014 Features „ Typical RDS(on) = 1.
6 mΩ at VGS = 10V, ID = 80 A „ Typical Qg(tot) = 126 nC at VGS = 10V, ID = 80 A „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Automotive Engine Control „ PowerTrain Management „ Solenoid and Motor Drivers „ Integrated Starter/Alternator „ Primary Switch for 12V Systems DD GS TO-263 FDB SERIES G S For current package drawing, please refer to the Fairchild web‐ site  at  https://www.
fairchildsemi.
com/package‐drawings/TO/ TO263A02.
pdf MOSFET Maximum Ratings TJ = 25°C unless otherwise noted.
Symbol Parameter VDSS VGS ID Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous (VGS=10) (Note 1) Pulsed Drain Current EAS Single Pulse Avalanche Energy PD Power Dissipation Derate Above 25oC TJ, TSTG RθJC RθJA Operating and Storage Temperature Thermal Resistance, Junction to Case Maxi...


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