Part Number
|
FDD86326 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel MOSFET |
Published
|
Feb 15, 2016 |
Detailed Description
|
FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
...
|
Datasheet
|
FDD86326
|
Overview
FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET
March 2015
FDD86326
N-Channel Shielded Gate PowerTrench® MOSFET
80 V, 37 A, 23 mΩ
Features
General Description
Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.
6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used
surface mount package Very low Qg and Qgd compared to competing trench
technologies Fast switching speed 100% UIL tested
RoHS Compliant
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate techn...
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