DatasheetsPDF.com

FDD86326

Fairchild Semiconductor
Part Number FDD86326
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Feb 15, 2016
Detailed Description FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET ...
Datasheet PDF File FDD86326 PDF File

FDD86326
FDD86326

Overview
FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.
6 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate techn...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)