PD - 95616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
INSULATED GATE BIPOLAR
TRANSISTOR WITH IRGSL4B60KD1PbF
ULTRAFAST SOFT RECOVERY DIODE Features
C VCES = 600V
• Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free
G
E
n-channel
IC = 7.
6A, TC=100°C tsc 10µs, TJ=150°C VCE(on) typ.
= 2.
1V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings
TO-220
D2Pak
TO-262
IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Parameter
Max.
Units
VCE...