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IRGSL4B60KD1PbF

International Rectifier
Part Number IRGSL4B60KD1PbF
Manufacturer International Rectifier
Description Insulated Gate Bipolar Transistor
Published Feb 16, 2016
Detailed Description PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECO...
Datasheet PDF File IRGSL4B60KD1PbF PDF File

IRGSL4B60KD1PbF
IRGSL4B60KD1PbF

Overview
PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature rated at 175°C.
• Lead-Free G E n-channel IC = 7.
6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ.
= 2.
1V Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
Absolute Maximum Ratings TO-220 D2Pak TO-262 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Parameter Max.
Units VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current cICM Pulse Collector Current (Ref.
Fig.
C.
T.
5) ILM Clamped Inductive Load current IF @ TC = 25°C Diode Continuous Forward Current IF @ TC = 100°C Diode Continuous Forward Current IFM Diode Maximum Forward Current VGE Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Storage Temperature Range, for 10 sec.
Thermal / Mechanical Characteristics 600 11 7.
6 22 22 11 6.
7 22 ±20 63 31 -55 to +175 300 (0.
063 in.
(1.
6mm) from case) V A V W °C Parameter Min.
Typ.
Max.
Units RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case- IGBT ––– ––– 2.
4 °C/W Junction-to-Case- Diode ––– ––– 6.
1 Case-to-Sink, flat, greased surface ––– 0.
50 ––– Junction-to-Ambient dJunction-to-Ambient (PCB Mount, steady state) ––– ––– ––– ––– 62 40 Weight ––– 1.
44 ––– g www.
irf.
com 1 8/30/04 IRGB/S/SL4B60KD1PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage — 0.
28 ...


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