Part Number
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PTFA212401E |
Manufacturer
|
Infineon |
Description
|
Thermally-Enhanced High Power RF LDMOS FET |
Published
|
Feb 21, 2016 |
Detailed Description
|
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz
Descript...
|
Datasheet
|
PTFA212401E
|
Overview
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz
Description
The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA212401E Package H-36260-2
PTFA212401F Package H-37260-2
PTFA212401E PTFA212401F
Adjacent Channel Power Ratio (dB) Drain Efficiency (%)
Single-carrier WCDMA Drive-up
VDD =...
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