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PTFA212401E

Infineon
Part Number PTFA212401E
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Feb 21, 2016
Detailed Description Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Descript...
Datasheet PDF File PTFA212401E PDF File

PTFA212401E
PTFA212401E

Overview
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFA212401E and PTFA212401F are 240-watt LDMOS FETs designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band.
Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFA212401E Package H-36260-2 PTFA212401F Package H-37260-2 PTFA212401E PTFA212401F Adjacent Channel Power Ratio (dB) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 1600 mA, ƒ = 2140 MHz, 3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping, PAR = 8.
5 dB, 3.
84 MHz BW -30 35 -35 ACPR Up -40 -45 ACPR Low 30 25 20 -50 15 -55 -60 36 Efficiency 38 40 42 44 46 Average Output Power (dBm) 10 5 48 Features • Thermally-enhanced packages, Pb-free and RoHS c...


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