High Power RF LDMOS Field Effect Transistor
PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz Description The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band. Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange. Manufact...
Infineon