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PXAC243502FV

Part Number	PXAC243502FV
Manufacturer	Infineon
Description	High Power RF LDMOS Field Effect Transistor
Published	Feb 21, 2016
Detailed Description	PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz Description The PXAC243502FV LD...
Datasheet	PXAC243502FV PDF File

Overview

PXAC243502FV High Power RF LDMOS Field Effect Transistor 350 W, 28 V, 2300 – 2400 MHz Description The PXAC243502FV LDMOS FET is a 350-watt LDMOS FET designed for use in power amplifier applications in the 2300 MHz to 2400 MHz frequency band.
Features include an asymmetric design with high gain and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC243502FV Package H-37275-4 Single-carrier WCDMA Broadband Performance VDD = 28 V, IDQ = 850 mA, POUT = 48.
3 dBm, 3GPP WCDMA signal, 10 dB PAR 20 55 18 Efficiency 45 16 Gain 14 35 25 12 15 Features • Asymmetric design - Main: 150 W P1dB - Peak: 200 W P1dB • Broadband internal matching • CW performance at 2350 MHz, 28 V - Ouput power = 250 W P1dB - Efficiency = 46% - Gain = 16 dB • Integrated ESD protection • Human Body Model Class 2 (per ANSI/ESDA/ JEDEC JS-001) • Low thermal resist...

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PXAC243502FV High Power RF LDMOS Field Effect Transistor - Infineon

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