UNISONIC TECHNOLOGIES CO.
, LTD
MJE13003-V
NPN SILICON
TRANSISTOR
NPN SILICON POWER
TRANSISTOR
DESCRIPTION
These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical.
They are particularly suited for 115 and 220V applications in switch mode.
FEATURES
* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.
5 ~ 1.
5 Amp, 25 and 100°C
Typical tC = 290ns @ 1A, 100°C.
* 700V blocking capability
APPLICATIONS
* Switching
regulator’s, inverters * Motor controls * Solenoid/relay drivers * Deflection circuits
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, Ltd
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