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MJE13003

CDIL
Part Number MJE13003
Manufacturer CDIL
Description (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS
Published Jan 1, 2014
Detailed Description Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS ...
Datasheet PDF File MJE13003 PDF File

MJE13003
MJE13003

Overview
Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.
12 89 275 ºC/W ºC/W ºC Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case for 5 Seconds *Pulse Test: Pulse Width=5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.
5V VCEV=Rated Value, VBE(off)=1.
5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.
0 1.
5 3.
0 0.
75 1.
5 2.
25 4.
5 1.
4 11.
2 40 320 - 65 to 150 MJE13003 400 700 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC MIN 300 400 TYP MAX UNIT V V Collector Cuttoff Current ICEV 1.
0 5.
0 1.
0 mA mA mA Emitter Cuttoff Current IEBO Continental Device India Limited Data Sheet Page 1 of 4 Free Datasheet http://www.
datasheet4u.
com/ NPN SILICON POWER TRANSISTORS MJE13002 MJE13003 TO126 Plastic Package ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION **hFE IC=0.
5A, VCE=2V DC Current Gain IC=1A,VCE=2V Collector Emitter Saturation Voltage **VCE(sat) IC=0.
5A, IB=0.
1A IC=1A, IB=0.
25A IC=1.
5A, IB=0.
5A o IC=1A, IB=0.
25A,TC=100 C IC=0.
5A, IB=0.
1A IC=1A, IB=0.
25A IC=1A, IB=0.
25A,TC=100oC MIN 8 5 TYP MAX 40 25 0.
5 1.
0 3.
0 1.
0...


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