BUK661R6-30C
N-channel TrenchMOS intermediate level FET
Rev.
01 — 6 September 2010
Product data sheet
1.
Product profile
1.
1 General description
Intermediate level gate drive N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits
AEC Q101 compliant Suitable for intermediate level gate
drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.
3 Applications
12 V Automotive systems Electric and electro-hydraulic power
steering Motor...