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BUK661R6-30C

NXP
Part Number BUK661R6-30C
Manufacturer NXP
Description N-channel TrenchMOS intermediate level FET
Published Feb 27, 2016
Detailed Description BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev. 01 — 6 September 2010 Product data sheet 1. Product pro...
Datasheet PDF File BUK661R6-30C PDF File

BUK661R6-30C
BUK661R6-30C

Overview
BUK661R6-30C N-channel TrenchMOS intermediate level FET Rev.
01 — 6 September 2010 Product data sheet 1.
Product profile 1.
1 General description Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology.
This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications.
1.
2 Features and benefits  AEC Q101 compliant  Suitable for intermediate level gate drive sources  Suitable for thermally demanding environments due to 175 °C rating 1.
3 Applications  12 V Automotive systems  Electric and electro-hydraulic power steering  Motor...


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