Part Number
|
CHA3512 |
Manufacturer
|
United Monolithic Semiconductors |
Description
|
GaAs Monolithic Microwave |
Published
|
Mar 4, 2016 |
Detailed Description
|
CHA3512
RoHS COMPLIANT
6-18GHz Low Noise Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA351...
|
Datasheet
|
CHA3512
|
Overview
CHA3512
RoHS COMPLIANT
6-18GHz Low Noise Digital Variable Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.
It is designed for defense applications.
The backside of the chip is both RF and DC grounded.
This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features
■ Performances: 6-18GHz ■ 23dBm saturated output power ■ 16dB gain ■ 1 bit attenuator for 20dB dyn...
Similar Datasheet