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CHA3512

United Monolithic Semiconductors
Part Number CHA3512
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
Published Mar 4, 2016
Detailed Description CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA351...
Datasheet PDF File CHA3512 PDF File

CHA3512
CHA3512

Overview
CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.
It is designed for defense applications.
The backside of the chip is both RF and DC grounded.
This helps to simplify the assembly process.
The circuit is manufactured with a pHEMT process, 0.
25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
It is available in chip form.
Main Features ■ Performances: 6-18GHz ■ 23dBm saturated output power ■ 16dB gain ■ 1 bit attenuator for 20dB dyn...


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