HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 26N60Q IXFT 26N60Q VDSS ID25 RDS(on) = 600 V = 26 A = 0.
25 Ω trr ≤ 250 ns Symbol VDSS VDGR V GS VGSM I D25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.
6 mm (0.
063 in) from case for 10 s Maximum Ratings 600 V 600 V ±20 V ±30 V 26 A 104 A 26 A 45 mJ 1.
5 J 5 V/ns 360 -55 .
.
.
+150 150 -55 .
.
.
+150 300 W °C ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)