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Part Number
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PF08107B |
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Manufacturer
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Hitachi Semiconductor |
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Description
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MOS FET Power Amplifier Module |
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Published
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Mar 6, 2016 |
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Detailed Description
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PF08107B
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-787F (Z) 7th Edition Feb. 2...
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Datasheet
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PF08107B
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Overview
PF08107B
MOS FET Power Amplifier Module for E-GSM and DCS1800 Dual Band Handy Phone
ADE-208-787F (Z) 7th Edition Feb.
2001
Application
• Dual band amplifier for E-GSM (880 MHz to 915 MHz) and DCS1800 (1710 MHz to 1785 MHz).
• For 3.
5 V nominal operation
Features
• 2 in / 2 out dual band amplifier • Simple external circuit including output matching circuit • One power control pin with one band switch • High gain 3stage amplifier : 0 dBm input Typ • Lead less thin & Small package : 8 × 13.
75 × 1.
6 mm Typ • High efficiency : 50 % Typ at 35.
0 dBm for E-GSM
43 % Typ at 32.
0 dBm for DCS1800
Pin Arrangement
• RF-K-8
8 7G65 G G 12 G 34
1: Pin GSM 2: Vapc
3: Vdd1
4: Pout GSM 5: Pout DCS 6: Vdd2
...
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