BLP8G10S-45P; BLP8G10S-45PG
Power LDMOS
transistor
Rev.
1 — 25 July 2013
Product data sheet
1.
Product profile
1.
1 General description
The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power
transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit.
Test signal
f
VDS
PL(AV)
Gp
D
ACPR
(MHz)
(V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
960 28 2.
5 20.
8 19.
8 49 [1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise specified.
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