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BLP8G10S-45P

NXP
Part Number BLP8G10S-45P
Manufacturer NXP
Description Power LDMOS transistor
Published Mar 7, 2016
Detailed Description BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev. 1 — 25 July 2013 Product data sheet 1. Product profile 1.1 Ge...
Datasheet PDF File BLP8G10S-45P PDF File

BLP8G10S-45P
BLP8G10S-45P

Overview
BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor Rev.
1 — 25 July 2013 Product data sheet 1.
Product profile 1.
1 General description The BLP8G10S-45P and BLP8G10S-45PG are dual path, 45 W LDMOS power transistors for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Application performance Typical RF performance at Tcase = 25 C; IDq = 224 mA in common source class-AB production circuit.
Test signal f VDS PL(AV) Gp D ACPR (MHz) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 960 28 2.
5 20.
8 19.
8 49 [1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.
4 dB at 0.
01% probability on CCDF; carrier spacing = 5 MHz; per section unless otherwise specified.
1.
2 Features and benefits  High efficiency  Excellent ruggedness  Designed for broadband operation (700 MHz to 1000 MHz)  Excellent thermal stability  High power gain  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
3 Applications  W-CDMA  LTE  GSM NXP Semiconductors BLP8G10S-45P; BLP8G10S-45PG Power LDMOS transistor 2.
Pinning information Table 2.
Pinning Pin Description BLP8G10S-45P (SOT1223-1) 1 drain 1 2 drain 2 3 gate 2 4 gate 1 5 source [1] Simplified outline  SLQLQGH[  BLP8G10S-45PG (SOT1224-1) 1 drain 1 2 drain 2 3 gate 2 4 gate 1 5 source [1]  SLQLQGH[  [1] Connected to flange.
3.
Ordering information Graphic symbol      DDD      DDD Table 3.
Ordering information Type number Package Name Description BLP8G10S-45P HSOP4F plastic, heatsink small outline package; 4 leads (flat) BLP8G10S-45PG HSOP4 plastic, heatsink small outline package; 4 leads Version SOT1223-1 SOT1224-1 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Min VDS VGS Tstg Tj Tcase drain-source voltage gate-source voltage storage temperature junction temperature case temperature ...


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