CWDM3011P SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM3011P is a high current silicon P-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications.
This MOSFET has high current capability with beneficially low rDS(ON), and low gate charge.
SOIC-8 CASE MARKING CODE: C3011P APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power ...

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