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CWDM3011N

Central Semiconductor
Part Number CWDM3011N
Manufacturer Central Semiconductor
Description N-channel MOSFET
Published Mar 14, 2016
Detailed Description CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The...
Datasheet PDF File CWDM3011N PDF File

CWDM3011N
CWDM3011N

Overview
CWDM3011N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET w w w.
c e n t r a l s e m i .
c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM3011N is a high current silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications.
This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage.
MARKING CODE: C3011N SOIC-8 CASE APPLICATIONS: • Load/Power switches • DC-DC converter circuits • Power management FEATURES: • Low rDS(ON) • High current • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VDS VGS ID IDM PD TJ, Tstg ΘJA 30 20 11 50 2.
5 -55 to +150 50 UNITS V V A A W °C °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR VGS=20...


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