Part Number
|
F1B2CCI |
Manufacturer
|
KEC |
Description
|
STACK SILICON DIFFUSED DIODE |
Published
|
Mar 14, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
ᴌAve...
|
Datasheet
|
F1B2CCI
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ).
ᴌRepetitive Peak Reverse Voltage : VRRM=200V.
ᴌRectifier Stack of Single Phase Center Tap Type.
POLARITY ᴌCC TYPE ᴌCATHODE COMMON
13
ᴌCA TYPE ᴌANODE COMMON
13
22
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Repetitive Peak Reverse Voltage
F1B2CCI F1B2CAI
Average Output Rectified
Current (Tc=101ᴱ) (Fig.
)
Peak One Cycle Surge Forward Current (Non-Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL VRRM
IO
IFSM Tj Tstg
RATING 200
10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150
UNIT V A
A ᴱ ᴱ
GF B P
A U
E
S
K
T...
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