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F1B2CAI

KEC
Part Number F1B2CAI
Manufacturer KEC
Description STACK SILICON DIFFUSED DIODE
Published Mar 14, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION. FEATURES ᴌAve...
Datasheet PDF File F1B2CAI PDF File

F1B2CAI
F1B2CAI

Overview
SEMICONDUCTOR TECHNICAL DATA F1B2CCI/CAI STACK SILICON DIFFUSED DIODE HIGH SPEED RECTIFIER APPLICATION.
FEATURES ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ).
ᴌRepetitive Peak Reverse Voltage : VRRM=200V.
ᴌRectifier Stack of Single Phase Center Tap Type.
POLARITY ᴌCC TYPE ᴌCATHODE COMMON 13 ᴌCA TYPE ᴌANODE COMMON 13 22 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Repetitive Peak Reverse Voltage F1B2CCI F1B2CAI Average Output Rectified Current (Tc=101ᴱ) (Fig.
) Peak One Cycle Surge Forward Current (Non-Repetitive) Junction Temperature Storage Temperature Range SYMBOL VRRM IO IFSM Tj Tstg RATING 200 10 60 (50Hz) 70 (60Hz) -40ᴕ150 -40ᴕ150 UNIT V A A ᴱ ᴱ GF B P A U E S K T...


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