Part Number
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STH320N4F6-2 |
Manufacturer
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STMicroelectronics |
Description
|
N-channel Power MOSFET |
Published
|
Mar 17, 2016 |
Detailed Description
|
Features
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power M...
|
Datasheet
|
STH320N4F6-2
|
Overview
Features
STH320N4F6-2, STH320N4F6-6
N-channel 40 V, 1.
1 mΩ typ.
, 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET
Datasheet — production data
Order codes STH320N4F6-2 STH320N4F6-6
VDS RDS(on) max
40 V
1.
3 mΩ
1.
Current limited by package.
■ Standard threshold drive ■ 100% avalanche tested
ID(1) 200 A
Applications
■ Automotive switching applications
TAB
TAB
2 3
1
H2PAK-2
1
H2PAK-6
7
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Figure 1.
Internal schematic diagram
D(TAB)
D(TAB)
G(1)
G(1)...
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