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STH320N4F6-2

STMicroelectronics
Part Number STH320N4F6-2
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Mar 17, 2016
Detailed Description Features STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power M...
Datasheet PDF File STH320N4F6-2 PDF File

STH320N4F6-2
STH320N4F6-2

Overview
Features STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.
1 mΩ typ.
, 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET Datasheet — production data Order codes STH320N4F6-2 STH320N4F6-6 VDS RDS(on) max 40 V 1.
3 mΩ 1.
Current limited by package.
■ Standard threshold drive ■ 100% avalanche tested ID(1) 200 A Applications ■ Automotive switching applications TAB TAB 2 3 1 H2PAK-2 1 H2PAK-6 7 Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.
The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
Figure 1.
Internal schematic diagram D(TAB) D(TAB) G(1) G(1) Table 1.
Device summary Order codes STH320N4F6-2 STH320N4F6-6 Marking 320N4F6 S(2, 3) H2PAK-2 Package H2PAK-2 H2PAK-6 S(2, 3, 4, 5, 6, 7) H2PAK-6 SC06140_H2PAK-2-6 Packaging Tape and reel February 2013 This is information on a product in full production.
Doc ID 024221 Rev 1 1/19 www.
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com 19 Contents Contents STH320N4F6-2, STH320N4F6-6 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Packaging mechanical data .
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16 6 Revision history .
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18 2/19 Doc ID 024221 Rev 1 STH320N4F6-2, STH320N4F6-6 1 Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID (1) Drain current (continuou...


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