Part Number
|
S2301 |
Manufacturer
|
Rohm |
Description
|
N-channel SiC power MOSFET |
Published
|
Mar 19, 2016 |
Detailed Description
|
S2301
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.)
ID
1200V 80mW 40A*1
Data Sheet
lFeatures 1) Low on-res...
|
Datasheet
|
S2301
|
Overview
S2301
N-channel SiC power MOSFET bare die
VDSS RDS(on) (Typ.
)
ID
1200V 80mW 40A*1
Data Sheet
lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive
lInner circuit
(D)
(G) (S)
(G) Gate (D) Drain (S) Source
*1 Body Diode
lApplication • Solar inverters • DC/DC converters • Switch mode power supplies • Induction heating • Motor drives
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Pulsed drain current
Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec)
Junction temperature
Range of storage temperature
Symbol
VDSS ID *1 ID,pulse *2 VGSS...
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