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S2308

Rohm
Part Number S2308
Manufacturer Rohm
Description N-channel SiC power MOSFET
Published Mar 19, 2016
Detailed Description S2308 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.) ID 1200V 280mW 14A*1 Data Sheet lFeatures 1) Low on-re...
Datasheet PDF File S2308 PDF File

S2308
S2308

Overview
S2308 N-channel SiC power MOSFET bare die VDSS RDS(on) (Typ.
) ID 1200V 280mW 14A*1 Data Sheet lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive lInner circuit (D) (G) (S) (G) Gate (D) Drain (S) Source *1 Body Diode lApplication • Solar inverters • DC/DC converters • Switch mode power supplies • Induction heating • Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Gate - Source voltage (DC) Gate - Source surge voltage (Tsurge ˂ 300nsec) Junction temperature Range of storage temperature Symbol VDSS ID *1 ID,pulse *2 VGSS VGSS-surge*3 Tj Tstg Value 1200 14 35 -6 to 22 -10 to 26 175 -55 to +175 Unit V A A V V °C °C www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
1/11 2016.
02 - Rev.
C S2308 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min.
Typ.
Max.
Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 1200 - -V Zero gate voltage drain current Gate - Source leakage current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance VDS = 1200V, VGS = 0V IDSS Tj = 25°C Tj = 150°C IGSS+ VGS = +22V, VDS = 0V IGSS- VGS = -6V, VDS = 0V VGS (th) VDS = VGS, ID = 1.
4mA VGS = 18V, ID = 4A RDS(on) *4 Tj = 25°C Tj = 125°C RG f = 1MHz, open drain 1.
6 - *1 Limited only by maximum temperature allowed.
*2 PW  10s, Duty cycle  1% *3 Example of acceptable Vgs waveform 1 10 A 2- - 100 nA - -100 nA 2.
8 4.
0 V 280 346 mW 388 - 17 - W tsurge +26V +22V *4 Pulsed tsurge 0V -6V -10V www.
rohm.
com © 2016 ROHM Co.
, Ltd.
All rights reserved.
2/11 2016.
02 - Rev.
C S2308 Data Sheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Transconductance Input capacitance Output capacitance Reverse transfer capacitance gfs *4 Ciss Coss Crss VDS = 10...


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