Part Number
|
BAV99 |
Manufacturer
|
KEC |
Description
|
SILICON EPITAXIAL PLANAR DIODE |
Published
|
Mar 21, 2016 |
Detailed Description
|
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23. Low Forward Voltag...
|
Datasheet
|
BAV99
|
Overview
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23.
Low Forward Voltag : VF=0.
9V(Typ.
).
Fast Reverse Recovery Time : trr=1.
6ns(Typ.
).
Small Total Capacitance : CT=0.
9pF(Typ.
).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms)
Power Dissipation
VRM VR IF IFSM
PD
85 80 250 2 225* 300**
Junction Temperature Storage Temperature Range
Tj 150 Tstg -55 150
* Note1 : Package Mounted On FR-5 Board (25.
4 19.
05 1.
57mm) ** Note2 : Package Mounted On 99.
5% Alumina (10 8 0.
6mm)
UNIT V V mA A
mW
BAV99
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLI...
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