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BAV100

NXP
Part Number BAV100
Manufacturer NXP
Description General purpose diodes
Published Mar 26, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product specifi...
Datasheet PDF File BAV100 PDF File

BAV100
BAV100

Overview
DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 BAV100 to BAV103 General purpose diodes Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diodes FEATURES • Small hermetically sealed glass SMD package • Switching speed: max.
50 ns • General application • Continuous reverse voltage: max.
50 V, 100 V, 150 V and 200 V respectively • Repetitive peak reverse voltage: max.
60 V, 120 V, 200 V and 250 V respectively • Repetitive peak forward current: max.
625 mA.
APPLICATIONS • Switching in industrial equipment e.
g.
oscilloscopes, digital voltmeters and video output stages in colour television.
Cathode indicated by green band.
handbook, 4 columns BAV100 to BAV103 DESCRIPTION The BAV100 to BAV103 are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
k a MAM061 Fig.
1 Simplified outline (SOD80C) and symbol.
1996 Sep 17 2 Philips Semiconductors Product specification General purpose diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BAV100 BAV101 BAV102 BAV103 VR continuous reverse voltage BAV100 BAV101 BAV102 BAV103 IF IFRM IFSM continuous forward current repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.
4 t = 1 µs t = 100 µs t=1s Ptot Tstg Tj Note 1.
Device mounted on an FR4 printed-circuit board.
total power dissipation storage temperature junction temperature Tamb = 25 °C; note 1 see Fig.
2; note 1 PARAMETER repetitive peak reverse voltage CONDITIONS BAV100 to BAV103 MIN.
− − − − − − − − − − MAX.
60 120 200 250 50 100 150 200 250 625 V V V V V V V V UNIT mA mA − − − − −65 − 9 3 1 400 +175 175 A A A mW °C °C 1996 Sep 17 3 Philips Semiconductors Product specification General purpose diodes ELECTRICAL CHARACTERISTICS Tj = 25 °C; unless otherwise specified.
SYMBOL VF PARAMETER forwar...


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