Part Number
|
STD10P10F6 |
Manufacturer
|
STMicroelectronics |
Description
|
P-Channel Power MOSFET |
Published
|
Mar 22, 2016 |
Detailed Description
|
STD10P10F6
Datasheet
P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2,...
|
Datasheet
|
STD10P10F6
|
Overview
STD10P10F6
Datasheet
P-channel -100 V, 0.
36 Ω typ.
, -10 A STripFET F6 Power MOSFET in a DPAK package
TAB 23 1
DPAK
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
STD10P10F6
-100 V
• Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss
RDS(on) max.
0.
18 Ω
ID -10 A
Applications
• Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.
The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.
Product status link STD10P10F6
Product summary
Order code
STD10P10F6
Marking
10P10F6
Package
DPAK
Packing
Tape and reel
...
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