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STD10P10F6

STMicroelectronics
Part Number STD10P10F6
Manufacturer STMicroelectronics
Description P-Channel Power MOSFET
Published Mar 22, 2016
Detailed Description STD10P10F6 Datasheet P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2,...
Datasheet PDF File STD10P10F6 PDF File

STD10P10F6
STD10P10F6

Overview
STD10P10F6 Datasheet P-channel -100 V, 0.
36 Ω typ.
, -10 A STripFET F6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS STD10P10F6 -100 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max.
0.
18 Ω ID -10 A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.
The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.
Product status link STD10P10F6 Product summary Order code STD10P10F6 Marking 10P10F6 Package DPAK Packing Tape and reel DS10343 - Rev 3 - April 2022 For further information contact your local STMicroelectronics sales office.
www.
st.
com 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC=25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
Pulse width limited by safe operating area.
Table 2.
Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1.
When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s.
STD10P10F6 Electrical ratings Value Unit -100 V ±20 V -10 A -7.
5 A -40 A 40 W - 55 to 175 °C Value 3.
75 50 Unit °C/W °C/W DS10343 - Rev 3 page 2/16 STD10P10F6 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified.
Table 3.
On /off states Symbol Parameter Test conditions V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = -250 μA Zero gate voltage IDSS drain current VGS = 0 V, VDS = -100 V VGS = 0 V, VDS = -100 V, TC = 125 °C(1) IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ...


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