STGF15M65DF2 Trench gate field-stop IGBT M series, 650 V 15 A low loss Datasheet - preliminary data TO-220FP Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 15 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capabilit...

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