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STGF15M65DF2

Part Number	STGF15M65DF2
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Mar 22, 2016
Detailed Description	STGF15M65DF2 Trench gate field-stop IGBT M series, 650 V 15 A low loss Datasheet - preliminary data TO-220FP Figure 1...
Datasheet	STGF15M65DF2 PDF File

Overview

STGF15M65DF2 Trench gate field-stop IGBT M series, 650 V 15 A low loss Datasheet - preliminary data TO-220FP Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 15 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represents an optimum compromise in performance to maximize the efficiency of inverter systems where low loss and short-circuit capability are essential.
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGF15M65DF2 Table 1: Device summary Marking G15M65DF2 Package TO-220FP Packing Tube October 2015 DocID028488 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation.
Details are subject to change without notice.
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com Contents Contents STGF15M65DF2 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves).
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6 3 Test circuits .
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11 4 Package information .
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12 4.
1 TO-220FP package information .
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12 5 Revision history .
14 2/15 DocID028488 Rev 1 STGF15M65DF2 Electrical ratings 1 Electrical ratings Symbol Table 2: Absolute maximum ratings Parameter Value U...

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