SEMICONDUCTOR
TECHNICAL DATA
KF5N60D/I
N CHANNEL MOS FIELD EFFECT
TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 600V, ID= 3.
5A Drain-Source ON Resistance : RDS(ON)=2.
0 Qg(typ) = 11nC
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) P...