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KF5N65I

Part Number	KF5N65I
Manufacturer	KEC
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
Published	Mar 23, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA KF5N65D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe M...
Datasheet	KF5N65I PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA KF5N65D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 650V, ID= 4.
4A Drain-Source ON Resistance : RDS(ON)=1.
75 Qg(typ) = 14.
5nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1...

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