SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES VDSS= 700V, ID= 6A Drain-Source ON Resistance : RDS(ON)=1.
65 Qg(typ) = 19nC (Max) @VGS = 10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR ...

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